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1

[IEEE 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Reno, NV (2018.9.23-2018.9.28)] 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Study on Latchup Path between HV-LDMOS and LV-CMOS in a 0.16-μm 30-V/1.8-V BCD Technology

Dai, Chia-Tsen, Ker, Ming-Dou, Jou, Yeh-Ning, Huang, Shao-Chang, Lin, Geeng-Lih, Lee, Jian-Hsing

Année:

2018

Langue:

english

Fichier:

PDF, 3.70 MB

english, 2018

2

[IEEE 2019 41st Annual EOS/ESD Symposium (EOS/ESD) - Riverside, CA, USA (2019.9.15-2019.9.20)] 2019 41st Annual EOS/ESD Symposium (EOS/ESD) - ESD Protection for Poly Fuses

Huang, Shao-Chang, Chen, Li-Fan, Chen, Chun-Chih, Lin, Ting-You, Hsu, Kai-Chieh, Jou, Yeh-Ning, Lin, Chih-Hsuan, Chen, Yung-Chang, Chen, Wei-Sung, Lee, Jian-Hsing

Année:

2019

Langue:

english

Fichier:

PDF, 2.04 MB

english, 2019

3

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - The ESD failure mechanism of ultra-HV 700V LDMOS

Lee, Jian-Hsing, Kao, Tzu-Cheng, Chan, Chien-Liang, Su, Jin-Lian, Su, Hung-Der, Chang, Kuo-Cheng

Année:

2011

Langue:

english

Fichier:

PDF, 669 KB

english, 2011

4

[IEEE 19th International Symposium on Power Semiconductor Devices and IC's - Jeju, Korea (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - The Influence of NBL Layout and LOCOS Space on Component ESD and System Level ESD for HV-LDMOS

Lee, Jian-Hsing, Chen, S.H., Tsai, Y.T., Lee, D.B., Chen, F.H., Liu, W.C, Chung, C.M., Hsu, S.L., Shih, J.R., Liang, Alan Y., Wu, Kenneth

Année:

2007

Langue:

english

Fichier:

PDF, 1.93 MB

english, 2007

5

[IEEE International Reliability Physics Symposium - Dallas, TX, USA (30 March-4 April 2003)] 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. - The failure mechanism of high voltage tolerance IO buffer under ESD

Jian-Hsing Lee,, Shih, J.R., Wu, Y.H., Ong, T.C.

Année:

2003

Langue:

english

Fichier:

PDF, 413 KB

english, 2003

6

A Novel Drain Design for ESD Improvement of UHV-LDMOS

Wu, Cheng-Hsu, Lee, Jian-Hsing, Lien, Chenhsin

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 1.27 MB

english, 2015

7

[IEEE 2002 IEEE International Reliability Physics Symposium Proceedings. 40th Annual - Dallas, TX, USA (7-11 April 2002)] 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) - Novel ESD protection structure with embedded SCR LDMOS for smart power technology

Jian-Hsing Lee,, Shih, J.R., Tang, C.S., Liu, K.C., Wu, Y.H., Shiue, R.Y., Ong, T.C., Peng, Y.K., Yue, J.T.

Année:

2002

Langue:

english

Fichier:

PDF, 374 KB

english, 2002

8

[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Scrubber clean process induced CDM ESD-like: CSM (Charged Surface Model) event caused by dummy patterns

Jian-Hsing Lee,, Shih, J.R., Chi-Lun Huang,, Hsieh, Sunnys, Wu, Kenneth

Année:

2008

Langue:

english

Fichier:

PDF, 631 KB

english, 2008

9

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Methodology to achieve planar technology-like ESD performance in FINFET process

Lee, Jian-Hsing, Prabhu, Manjunatha, Korablev, Konstantin, Singh, Jagar, Natarajan, Mahadeva Iyer, Pandey, Shesh Mani

Année:

2015

Langue:

english

Fichier:

PDF, 845 KB

english, 2015

10

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Printed-circuit board (PCB) charge induced product yield-loss during the final test

Lee, Jian-Hsing, Takahashi, Kunihiko, Prabhu, Manjunatha, Natarajan, Mahadeva Iyer

Année:

2015

Langue:

english

Fichier:

PDF, 949 KB

english, 2015

11

Energy Transformation Between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test

Nidhi, Karuna, Lee, Jian-Hsing, Huang, Shao-Chang, Ker, Ming-Dou

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2020

Fichier:

PDF, 1.67 MB

2020

12

The direct evidence of substrate potential propagation in a gate-grounded NMOS

Dao-Hong Yang, Jone F. Chen, Kuo-Ming Wu, J.R. Shih, Jian-Hsing Lee

Journal:

Solid-State Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 721 KB

english, 2010

13

Two-stage trigger silicon-controller rectifier (SCR) for radio-frequency (RF) input and output protections in nanometer technologies

Jian-Hsing Lee, Yi-Hsun Wu, Shao-Chang Huang, Yu-Huei Lee, Ke-Horng Chen

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 1.71 MB

english, 2012

14

[IEEE Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) - Singapore (1999.07.9-1999.07.9)] Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) - An analytical model of positive HBM ESD current distribution and the modified multi-finger protection structure

Jian-Hsing Lee,, Jiaw-Ren Shih,, Yi-Hsun Wu,, Boon-Khim Liew,, Huey-Liang Hwang,

Année:

1999

Langue:

english

Fichier:

PDF, 688 KB

english, 1999

15

[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - A simple solution for low-driving-current output buffer failed at the low voltage ESD zapping event

Lee, Jian-Hsing, Shih, J. R., Yang, Dao-Hong, Kuan, Hing-Poh

Année:

2012

Langue:

english

Fichier:

PDF, 891 KB

english, 2012

16

[IEEE 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) - Singapore, Singapore (2010.07.5-2010.07.9)] 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - The influence of decoupling capacitor on the discharge behavior of fully silcided power-clamped device under HBM ESD event

Jian-Hsing Lee,, Shih, J.R., Kuan, H.P., Kenneth Wu,

Année:

2010

Langue:

english

Fichier:

PDF, 851 KB

english, 2010

17

[IEEE Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 - Taiwan (5-8 July 2004)] Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743) - The positive trigger voltage lowering effect for latch-up

Jian-Hsing Lee,, Wu-Te Weng,, Jiaw-Ren Shih,, Kuo-Feng Yu,, Tong-Chern Ong,

Année:

2004

Langue:

english

Fichier:

PDF, 244 KB

english, 2004

18

[IEEE 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, Jiangsu, China (2009.07.6-2009.07.10)] 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - The study of sensitive circuit and layout for CDM improvement

Jian-Hsing Lee,, Shih, J.R., Shawn Guo,, Dao-Hong Yang,, Chen, Jone F., Su, David, Wu, Kenneth

Année:

2009

Langue:

english

Fichier:

PDF, 6.91 MB

english, 2009

19

[IEEE 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - singapore (2008.07.7-2008.07.11)] 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - A novel ESD device structure with fully silicide process for mixed high/low voltage operation

Jian-Hsing Lee,, Shih, J.R., Dao-Hong Yang,, Chen, Jone F., Wu, Kenneth

Année:

2008

Langue:

english

Fichier:

PDF, 217 KB

english, 2008

20

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - The failure mechanism re-investigation Of ESD device on EPI wafer

Lee, Jian-Hsing, Kung, Clak, Kung, Ellis, Shih, J. R.

Année:

2012

Langue:

english

Fichier:

PDF, 869 KB

english, 2012

21

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - A voltage base electrothermal model for the interconnection and E-Fuse under the DC and pulse stresses

Lee, Jian-Hsing, Prabhu, Manjunatha, Iyer, Natarajan Mahadeva, Wu, Cheng-Hsu, Chen-Hsin Lien,

Année:

2014

Langue:

english

Fichier:

PDF, 586 KB

english, 2014

22

[IEEE 2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Garden Grove, CA, USA (2016.9.11-2016.9.16)] 2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Predictive high voltage ESD device design methodology

Lee, Jian-Hsing, Iyer, Natarajan Mahadeva, Jain, Ruchil, Prabhu, Manjunatha

Année:

2016

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2016

23

[IEEE 2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Garden Grove, CA, USA (2016.9.11-2016.9.16)] 2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Physics of SOA degradation phenomena in power transistors under ESD conditions

Lee, Jian-Hsing, Iyer, Natarajan Mahadeva, Zhang, Haojun, Prabhu, Manjunatha, Li, Patrick Cao, Zhang, Guowei, Tsai, Tsung-Che

Année:

2016

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2016

24

[IEEE 2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Tucson, AZ, USA (2017.9.10-2017.9.14)] 2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Schottky LDNMOS for HV ESD protection

Lee, Jian-Hsing, Iyer, Natarajan Mahadeva, Jain, Ruchil, Tsai, Tsung-Che

Année:

2017

Langue:

english

Fichier:

PDF, 2.58 MB

english, 2017

25

Engineering ESD Robust LDMOS SCR Devices in FinFET Technology

Lee, Jian-Hsing, Prabhu, Manjunatha, Natarajan, Mahadeva Iyer

Journal:

IEEE Electron Device Letters

Année:

2018

Langue:

english

Fichier:

PDF, 802 KB

english, 2018

26

Improving Safe-Operating-Area of a 5-V n-Channel Large Array MOSFET in a 0.15-μm BCD Process

Nidhi, Karuna, Ker, Ming-Dou, Lin, Tingyou, Lee, Jian-Hsing

Journal:

IEEE Transactions on Electron Devices

Année:

2018

Langue:

english

Fichier:

PDF, 4.47 MB

english, 2018

27

[IEEE 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore, Singapore (2020.7.20-2020.7.23)] 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Optimization on On-Chip Surge Protection Device for USB Type-C HV Pins

Chen, Ming-Chun, Ker, Ming-Dou, Jou, Yeh-Ning, Lee, Jian-Hsing

Année:

2020

Fichier:

PDF, 1.56 MB

2020

28

Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection

Jian-Hsing Lee, Shao-Chang Huang, Hung-Der Su, Ke-Horng Chen

Journal:

IEEE Transactions on Electron Devices

Année:

2011

Langue:

english

Fichier:

PDF, 1.27 MB

english, 2011

29

[IEEE 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Phoenix, AZ, USA (2007.04.15-2007.04.19)] 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - The Impact of Ball-Bonding Induced Voltage Transient on Sub-90nm CMOS Technology

Lee, Jian-Hsing, Shih, J.R., Lin, B. L., Lin, C.H., Niu, Pao-Kang, Wang, Jerry, Tang, Chin-Hsin, Oates, Tony, Wu, Kenneth

Année:

2007

Langue:

english

Fichier:

PDF, 4.58 MB

english, 2007

30

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Low-side driver's failure mechanism in a class-D amplifier under short circuit test and a robust driver device

Jian-Hsing Lee,, Shih, J.R., Tong-Chern Ong,, Kenneth Wu,

Année:

2010

Langue:

english

Fichier:

PDF, 726 KB

english, 2010

31

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Two-stage trigger silicon-controller rectifier (SCR) for radio-frequency (RF) ESD protection in the nanometer technologies

Lee, Jian-Hsing, Huang, Shao-Chang, Lee, Yu-Huei, Chen, Ke-Horng

Année:

2011

Langue:

english

Fichier:

PDF, 1.12 MB

english, 2011

32

[IEEE 2006 IEEE International Reliability Physics Symposium Proceedings - San Jose, CA, USA (2006.03.26-2006.03.30)] 2006 IEEE International Reliability Physics Symposium Proceedings - The Dynamic Current Distribution of a Multi-Fingered GGNMOS Under High Current Stress and HBMESD Events

Lee, Jian-hsing, Wu, Kuo-ming, Huang, Shao-chang, Tang, Chin-hsin

Année:

2006

Langue:

english

Fichier:

PDF, 269 KB

english, 2006

33

[IEEE IEEE 2002 Custom Integrated Circuits Conference - Orlando, FL, USA (12-15 May 2002)] Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) - The embedded SCR NMOS and low capacitance ESD protection device

Jian-Hsing Lee,, Wu, Y.H., Peng, K.R., Chang, R.Y., Yu, T.L., Ong, T.C.

Année:

2002

Langue:

english

Fichier:

PDF, 408 KB

english, 2002

34

Evaluating the CDM-Robustness of the input buffer with very fast transmission line pulse

Kao, Tzu-Cheng, Lee, Jian-Hsing, Hung, Chung-Yu, Lien, Chen-Hsin, Su, Hung-Der

Journal:

Solid-State Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 4.13 MB

english, 2015

35

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - The mechanism of device damage during bump process for flip-chip package

Lee, Jian-Hsing, Shih, J.R., Tang, Chin-Hsin, Niu, Pao-Kang, Perng, D-J, Lin, Y-T, Su, David, Wu, Kenneth

Année:

2009

Langue:

english

Fichier:

PDF, 1.59 MB

english, 2009

36

[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - The internal circuit damage of a high-voltage product during the negative-current-triggered (NCT) latch-up test

Jian-Hsing Lee,, Kung, C., Kung, E., Dao-Hong Yang,, Shih, J. R.

Année:

2013

Langue:

english

Fichier:

PDF, 3.05 MB

english, 2013

37

[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - The dynamic thermal behavior of silicided polysilicon under hight current stress event

Lee, Jian-Hsing, Shih, J.R., David-Su,, Wu, Kenneth

Année:

2009

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2009

38

[IEEE 2011 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2011.04.10-2011.04.14)] 2011 International Reliability Physics Symposium - A new ESD model induced yield loss during chip-on-film package process and it's failure mechanism

Jian-Hsing Lee,, Shih, J. R., Huang, Yu-Hui, Lin, C.P., Su, David, Wu, Kenneth

Année:

2011

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2011

39

Failure mechanism for input buffer under CDM test

Weng, Wu-Te, Lee, Jian-Hsing, Hung, Chung-Yu, Chiu, Chien-Wei, Lien, Chen-Hsin, Su, Hung-Der, Lo, Kuo-Hsuan, Kao, Tzu-Cheng

Journal:

Electronics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 445 KB

english, 2014

40

Simple scheme to increase hold voltage for silicon-controlled rectifier

Kao, Tzu-Cheng, Huang, Chih-Fang, Huang, Tsung-Yi, Lee, Jian-Hsing, Lo, Kuo-Hsuan, Su, Hung-Der, Gong, Jeng, Hung, Chung-Yu, Chang, Kuo-Cheng

Journal:

Electronics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 356 KB

english, 2014

41

The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability

Shih, Jiaw-Ren, Lee, Jian-Hsing, Wu, Yi-Hsun, Liao, Scott, Liew, Boon-Khim, Shiue, Ruey-Yun, Hwang, Huey-Liang, Yue, John

Journal:

Japanese Journal of Applied Physics

Année:

2000

Langue:

english

Fichier:

PDF, 204 KB

english, 2000

42

The Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge without Sacrificing the Performance in Sub-Quarter Micron Dual Gate Oxide Process

Shih, Jiaw-Ren, Lee, Jian-Hsing, Chen, Shui-Hung, Wu, Yi-Hsun, Diaz, Carlos-H, Liew, Boon-Khim, Hwang, Huey-Liang

Journal:

Japanese Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 367 KB

english, 1999

43

Analytical Model of Human Body Model Electrostatic Discharge Current Distribution and Novel Electrostatic Discharge Protection Structure

Shih, Jiaw-Ren, Lee, Jian-Hsing, Hwang, Huey-Liang, Liew, Boon-Khim, Chiang, Shang-Yi

Journal:

Japanese Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 960 KB

english, 1999

44

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Enhanced CDM-robustness for the packaged IC with the extra bonding wire to the die-attach plate

Kao, Tzu-Cheng, Lee, Jian-Hsing, Lien, Chen-Hsin, Wang, Chih-Hsien, Tai, Kuang-Cheng, Su, Hung-Der

Année:

2015

Langue:

english

Fichier:

PDF, 461 KB

english, 2015

45

Improving the Electrostatic Discharge Robustness of a Junction Barrier Schottky Diode Using an Embedded p-n-p BJT

Chung-Yu Hung,, Tzu-Cheng Kao,, Jian-Hsing Lee,, Jeng Gong,, Kuo-Hsuan Lo,, Hung-Der Su,, Chih-Fang Haung,

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 597 KB

english, 2014

46

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering

Kao, Tzu-Cheng, Lien, Chen-Hsin, Chiu, Chien-Wei, Lee, Jian-Hsing, Lo, Yen-Hsiang, Hung, Chung-Yu, Huang, Tsung-Yi, Su, Hung-Der

Année:

2015

Langue:

english

Fichier:

PDF, 715 KB

english, 2015

47

[IEEE 2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Reno, NV, USA (2015.9.27-2015.10.2)] 2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Source of miscorrelation of product level HBM to TLP test results

Prabhu, Manjunatha, Jian-Hsing Lee,, Natarajan, Mahadeva Iyer, Kumar, Vasantha, Jain, Ruchil, Tsung-Che Tsai,, Li Zhiqing,, Thurmer, Dominic

Année:

2015

Langue:

english

Fichier:

PDF, 1.30 MB

english, 2015

48

[IEEE 2016 IEEE International Reliability Physics Symposium (IRPS) - Pasadena, CA, USA (2016.4.17-2016.4.21)] 2016 IEEE International Reliability Physics Symposium (IRPS) - Failure mechanism of high-voltage isolated lateral diffused NMOS under high-current events

Wu, Cheng-Hsu, Lien, Chen-Hsin, Lee, Jian-Hsing

Année:

2016

Langue:

english

Fichier:

PDF, 623 KB

english, 2016

49

A New Low-Voltage Triggering SCR for the Protection of a Double RESURF HV-LDMOS

Wu, Cheng-Hsu, Lee, Jian-Hsing, Lien, Chen-Hsin

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 720 KB

english, 2016

50

ESD Robust Fully Salicided 5-V Integrated Power MOSFET in Submicron CMOS

Lee, Jian-Hsing, Iyer, Natarajan Mahadeva, Prabhu, Manjunatha

Journal:

IEEE Electron Device Letters

Année:

2017

Langue:

english

Fichier:

PDF, 983 KB

english, 2017